| PART |
Description |
Maker |
| UPD44321362GF-A50 UPD44321182 UPD44321182GF-A50 |
32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
NEC[NEC]
|
| UPD4481182GF-A44 UPD4481182GF-A50 UPD4481182GF-A60 |
8M-BIT ZEROSB SRAM PIPELINED OPERATION 800万位ZEROSB SRAM的流水线操作
8M-BIT ZEROSB SRAM PIPELINED OPERATION
|
NEC, Corp.
NEC Corp.
|
| UPD44321182GF-A50 UPD44321182GF-A50Y UPD44321362GF |
32M-bit(2M-word x 16-bit) ZEROSB(TM) SRAM
32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAM
|
NEC
|
| UPD44321182GF-A50 UPD44321362GF-A50 |
Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polypropylene; Capacitance:22000pF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:Yes; Series:171; Termination:Radial Leaded
32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
NEC Corp.
|
| UPD4481162GF-A60 UPD4481162GF-A60Y UPD4481182GF-A6 |
8M-bit(512K-word x 16-bit) ZEROSB(TM) SRAM
8M-bit(512K-word x 18-bit) ZEROSB(TM) SRAM
8M-bit(256K-word x 32-bit) ZEROSB(TM) SRAM
8M-bit(256K-word x 36-bit) ZEROSB(TM) SRAM
|
NEC
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| UPD4481161GF-A65 UPD4481181GF-A65 UPD4481321GF-A65 |
POT 50 OHM 3/8 SQ CERM SL ST
8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION 800万位ZEROSB SRAM的流动经手术
TRIMMER, 100R
|
NEC Corp.
NEC, Corp.
|
| CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| MC-222263F9-B85X-BT3 MC-222263-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
| MC-222272F9-B85X-BT3 MC-222272-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
